Modeling of hydrogen diffusion in n- and p-type siliconMATHIOT, D.Physical review. B, Condensed matter. 1989, Vol 40, Num 8, pp 5867-5870, issn 0163-1829, 4 p.Article

Thermal donor formation in silicon: a new kinetic model based on self-interstitial aggregationMATHIOT, D.Applied physics letters. 1987, Vol 51, Num 12, pp 904-906, issn 0003-6951Article

A MODEL FOR THE DETERMINATION OF THE DEFECT CONCENTRATIONS IN III-V COMPOUNDS. THE CASE OF GASBEDELIN G; MATHIOT D.1980; PHILOS. MAG., B; ISSN 0141-8637; GBR; DA. 1980; VOL. 42; NO 1; PP. 95-110; BIBL. 36 REF.Article

INFLUENCE OF THE NONEQUILIBRIUM VACANCIES ON THE DIFFUSION OF PHOSPHORUS INTO SILICONMATHIOT D; PFISTER JC.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 4; PP. 3053-3058; BIBL. 11 REF.Article

Solubility enhancement of metallic impurities in silicon by rapid thermal annealingMATHIOT, D; BERBIER, D.Journal of applied physics. 1991, Vol 69, Num 7, pp 3878-3881, issn 0021-8979, 4 p.Article

Dopant diffusion in silicon: a consistent view involving nonequilibrium defectsMATHIOT, D; PFISTER, J. C.Journal of applied physics. 1984, Vol 55, Num 10, pp 3518-3530, issn 0021-8979Article

Kinetics of arsenic segregation at grain boundaries in polycrystalline siliconNEDELEC, S; MATHIOT, D.Semiconductor science and technology. 1997, Vol 12, Num 11, pp 1438-1445, issn 0268-1242Article

Titanium diffusion in siliconHOCINE, S; MATHIOT, D.Applied physics letters. 1988, Vol 53, Num 14, pp 1269-1271, issn 0003-6951Article

Point defect kinetics and dopant diffusion during silicon oxidationMATHIOT, D; PFISTER, J. C.Applied physics letters. 1986, Vol 48, Num 10, pp 627-629, issn 0003-6951Article

Measurement of positron mobility in Si at 30-300 KMAKINEN, J; CORBEL, C; HAUTOJARVI, P et al.Physical review. B, Condensed matter. 1991, Vol 43, Num 14, pp 12114-12117, issn 0163-1829, 4 p.Article

Electron-irradiation-induced defects in Si-Ge alloysGOUBET, J. J; STIEVENARD, D; MATHIOT, D et al.Physical review. B, Condensed matter. 1992, Vol 46, Num 16, pp 10113-10118, issn 0163-1829Article

Positron diffusion in an electric field in SiCORBEL, C; HAUTOJARVI, P; MAKINEN, J et al.Journal of physics. Condensed matter (Print). 1989, Vol 1, Num 35, pp 6315-6319, issn 0953-8984Article

Point defect generation during high temperature annealing of the Si-SiO₂ interfaceDEVINE, R. A. B; MATHIOT, D; WARREN, W. L et al.Applied physics letters. 1993, Vol 63, Num 21, pp 2926-2928, issn 0003-6951Article

Accurate two-dimensional modelling of the titanium silicide process with an application to a thin base n-p-n bipolar transistorFORNARA, P; DENORME, S; DE BERRANGER, E et al.Microelectronics journal. 1998, Vol 29, Num 3, pp 71-81, issn 0959-8324Article

Numerical and experimental analysis of pulsed excimer laser processing of silicon carbideDUTTO, C; FOGARASSY, E; MATHIOT, D et al.Applied surface science. 2001, Vol 184, Num 1-4, pp 362-366, issn 0169-4332Conference Paper

Physical modelling of the enhanced diffusion of boron due to ion implantation in thin-base npn bipolar transistorsMOUIS, M; GREGORY, H. J; DENORME, S et al.Microelectronics journal. 1995, Vol 26, Num 2-3, pp 255-259, issn 0959-8324Article

Modeling of hydrogen diffusion in p-type GaAs:ZnRAHBI, R; MATHIOT, D; CHEVALLIER, J et al.Physica. B, Condensed matter. 1991, Vol 170, Num 1-4, pp 135-140, issn 0921-4526, 6 p.Conference Paper

Two-dimensional modeling of the enhanced diffusion in thin base n-p-n bipolar transistors after lateral ion implantationsDENORME, S; MATHIOT, D; DOLLFUS, P et al.I.E.E.E. transactions on electron devices. 1995, Vol 42, Num 3, pp 523-527, issn 0018-9383Article

On the modeling of hydrogen diffusion processes and complex formation in p-type crystalline siliconRIZK, R; DE MIERRY, P; BALLUTAUD, D et al.Physica. B, Condensed matter. 1991, Vol 170, Num 1-4, pp 129-134, issn 0921-4526, 6 p.Conference Paper

Dopant diffusion and activation induced by sub-melt laser anneal within the co-implanted p+ polycrystalline silicon gate used in CMOS technologiesCOLIN, A; MORIN, P; BENEYTON, R et al.Thin solid films. 2010, Vol 518, Num 9, pp 2390-2393, issn 0040-6090, 4 p.Conference Paper

A comparative study of TiSi₂ obtained by solid-state reaction and chemical vapor depositionGOUY-PAILLER, P; HAOND, M; MATHIOT, D et al.Applied surface science. 1993, Vol 73, pp 25-30, issn 0169-4332Conference Paper